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| GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications * * * The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) * * Low saturation voltage: VCE (sat) = 2.0 V (typ.) FRD included between emitter and collector Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg Rating 600 20 30 60 30 60 170 150 -55 to 150 Unit V V A JEDEC JEITA TOSHIBA 2-16C1C A W C C Weight: 4.6 g (typ.) Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.735 1.90 Unit C/W C/W Equivalent Circuit Collector Gate Emitter 1 2002-04-19 GT30J324 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Turn-on switching loss Turn-off switching loss Symbol IGES ICES VGE (OFF) VCE (sat) Cies td (on) tr ton td (off) tf toff Eon Eoff VF trr IF = 30 A, VGE = 0 IF = 30 A, di/dt = -100 A/s Inductive Load VCC = 300 V, IC = 30 A VGG = +15 V, RG = 24 (Note 1) (Note 2) Test Condition VGE = 20 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 3 mA, VCE = 5 V IC = 30 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Min 3.5 Typ. 2.0 4650 0.09 0.07 0.24 0.30 0.05 0.43 1.00 0.80 60 Max 500 1.0 6.5 2.45 mJ 3.8 V ns s Unit nA mA V V pF Switching loss Peak forward voltage Reverse recovery time Note 1: Switching time measurement circuit and input/output waveforms VGE 0 -VGE IC RG VCE 0 VCE 10% td (off) tf toff 10% 10% td (on) tr ton 10% L VCC IC 90% 90% 90% 10% Note 2: Switching loss measurement waveforms VGE 0 90% 10% IC VCE Eoff Eon 5% 0 2 2002-04-19 GT30J324 IC - VCE 60 Common emitter 50 Tc = 25C 20 15 20 10 VCE - VGE Common emitter (V) Tc = -40C 16 (A) IC 40 Collector-emitter voltage 9 VCE 12 Collector current 30 8 60 30 4 IC = 10 A 0 0 4 8 12 16 20 20 VGE = 8 V 10 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 20 Common emitter 20 VCE - VGE Common emitter (V) Tc = 25C 16 (V) Tc = 125C 16 VCE Collector-emitter voltage 12 Collector-emitter voltage VCE 12 8 30 60 4 IC = 10 A 0 0 4 8 12 16 20 8 30 4 IC = 10 A 0 0 4 8 12 16 20 60 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 60 Common emitter 50 VCE = 5 V 4 Common emitter VCE (sat) - Tc Collector-emitter saturation voltage VCE (sat) (V) VGE = 15 V 3 60 (A) Collector current IC 40 30 2 30 20 IC = 10 A 1 10 Tc = 125C 0 0 4 8 25 -40 12 16 20 0 -60 -20 20 60 100 140 Gate-emitter voltage VGE (V) Case temperature Tc (C) 3 2002-04-19 GT30J324 Switching time ton, tr, td (on) - RG 10 Common emitter VCC = 300 V VGG = 15 V IC = 30 A : Tc = 25C : Tc = 125C (Note 1) 3 Switching time ton, tr, td (on) - IC Common emitter VCC = 300 V VGG = 15 V RG = 24 : Tc = 25C : Tc = 125C (Note 1) (s) 3 (s) ton, tr, td (on) 1 1 ton, tr, td (on) 0.3 ton 0.1 td (on) 0.3 ton 0.1 td (on) tr Switching time Switching time 0.03 0.03 tr 0.01 0 0.01 1 3 10 30 100 300 1000 5 10 15 20 25 30 Gate resistance RG () Collector current IC (A) Switching time toff, tf, td (off) - RG 10 Common emitter VCC = 300 V VGG = 15 V IC = 30 A : Tc = 25C : Tc = 125C (Note 1) 10 Switching time toff, tf, td (off) - IC Common emitter VCC = 300 V VGG = 15 V RG = 24 : Tc = 25C : Tc = 125C (Note 1) toff 0.3 td (off) tf 0.1 (s) (s) 3 3 toff, tf, td (off) 1 toff, tf, td (off) Switching time 30 100 300 1000 1 0.3 Switching time toff td (off) 0.1 0.03 tf 0.03 0.01 1 3 10 0.01 0 5 10 15 20 25 30 Gate resistance RG () Collector current IC (A) Switching loss 30 Common emitter VCC = 300 V VGG = 15 V IC = 30 A : Tc = 25C : Tc = 125C (Note 2) Eon, Eoff - RG 3 Switching loss Eon, Eoff - IC (mJ) (mJ) 10 1 Eon Eon, Eoff 3 Eon Eon, Eoff 0.3 Eoff 0.1 Common emitter VCC = 300 V VGG = 15 V RG = 24 : Tc = 25C : Tc = 125C (Note 2) 5 10 15 20 25 30 Switching loss 1 Eoff 0.3 Switching loss 10 30 100 300 1000 0.03 0.1 1 3 0.01 0 Gate resistance RG () Collector current IC (A) 4 2002-04-19 GT30J324 C - VCE 10000 500 Common emitter RL = 10 Tc = 25C VCE, VGE - QG 20 (pF) VCE 400 16 1000 Collector-emitter voltage 300 300 200 200 12 300 8 VCE = 100 V 100 Common emitter VGE = 0 30 f = 1 MHz Tc = 25C 10 0.1 0.3 1 3 10 30 100 300 1000 Coes Cres 100 4 0 0 40 80 120 160 0 200 Collector-emitter voltage VCE (V) Gate charge QG (nC) IF - VF 60 Common collector Irr 3 10 trr, Irr - IF 1000 (A) Reverse recovery current Irr Forward current IF 40 30 1 trr Common collector di/dt = -100 A/s VGE = 0 : Tc = 25C : Tc = 125C 5 10 15 20 25 100 20 25 10 Tc = 125C -40 0 0 0.6 1.2 1.8 2.4 3.0 3.6 0.3 30 0.1 0 10 30 Forward voltage VF (V) Forward current IF (A) Safe Operating Area 100 IC max (pulsed)* IC max (continuous) 100 s* 10 DC operation 3 *: Single pulse Tc = 25C 1 ms* 50 s* 30 100 Reverse Bias SOA 30 (A) (A) IC Collector current Collector current IC 10 3 1 1 Curves must be derated linearly 0.3 with increase in temperature. 0.1 1 3 10 30 100 0.3 10 ms* 300 1000 0.1 1 Tj 125C VGE = 15 V RG = 24 3 10 30 100 300 1000 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 5 2002-04-19 Reverse recovery time trr 300 (ns) 50 VGE = 0 (A) Gate-emitter voltage VGE Capacitance C (V) 3000 Cies (V) GT30J324 rth (t) - tw (C/W) 102 101 FRD 100 IGBT 10-1 Transient thermal resistance rth (t) 10-2 10-3 Tc = 25C 10 -4 10-4 10-5 10 -3 10 -2 10 -1 10 0 101 102 Pulse width tw (s) 6 2002-04-19 GT30J324 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 7 2002-04-19 |
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